TransEON Inc.

Published purpose

The objective of the proposed project is to further develop components necessary to enable a gallium nitride metal-oxide-semiconductor field-effect transistor (GaN MOSFET) monolithic microwave integrated circuit (MMIC) platform. Such platform will be suitable for fabrication of highly-integrable radio frequency (RF) chips with exceptional performance for next-generation satellite communications and spaceborne radar systems. In particular, upon completion, a full Q-band power amplifier MMIC demonstrator will be fabricated to realize the performance benefits of this platform over competing solutions at extremely-high frequencies (EHF). Owing to the nascence of the underlying GaN MOSFET technology, novel fabrication methods and design methodologies will be developed to complete the desired MMIC deliverable. Potential future benefits directly derived from this project include significant improvements to the speed, latency, and cost of satellite internet for the Canadian public through improved satellite communication hardware.