Synthergy Inc

Published purpose

Silicon nitride (SiN) is an important material in the semiconductor industry particularly for logic and memory applications. Atomic layer deposition (ALD) is suited for the growth of SiN films because of its extremely precise film thickness control and high conformality. Currently, most ALD processes are affected by non-idealities including steric hindrance and parasitic non-ALD growth processes. Consequently, this project aims to quantify how these non-idealities and the various growth parameters affect the ALD SiN growth by developing a quantitative ALD model. This predictive ALD model can characterize the efficiency of the SiN deposition and thus provide a roadmap towards reducing the carbon footprint of the ALD SiN process.