Carleton University

Published purpose

A key expectation of the physical devices intended for next-generation quantum cybersecurity is the reliable sourcing, processing and transfer of quantum information. A major obstacle to the realization of such devices is the extreme fragility of this quantum information with special and unique challenges encountered in device design and in the materials employed. In this context, an extremely promising materials candidate is low pressure chemical vapor deposited (LPCVD) silicon nitride (Si3N4). Its wide bandgap, ultra-low loss, large nonlinear refractive index and compatibility with well-established CMOS fabrication methodologies makes it ideal for sourcing, guiding and processing fragile quantum states. The Project will explore the deposition of stoichiometric silicon nitride that will serve as a materials platform for quantum devices.