Corporation de l'École Polytechnique de Montréal

Published purpose

This project sets out to determine the design of new optically active group IV semiconductor quantum materials. The proposed research seeks to establish the foundation of future quantum devices exploiting hole spin-photon interface in a platform compatible with processing standards of the semiconductor industry. For decades, Si-compatible low-dimensional systems and quantum devices have been exploiting either tensile strained Si or compressively strained Germanium (Ge) quantum wells (QWs), which are the only group IV systems that can currently be routinely obtained using SiGe as growth template and barrier layers. For quantum information, the former has been used as the building block for electron spin qubits, whereas the latter has been explored in new schemes for hole spin qubits. In this project, the team will explore a third low-dimension system recently developed. This system consists of highly tensile strained Ge QW integrated on an optically active platform. Our experimental plan aims at establishing the basic properties of light holes in this quantum structure and evaluate its relevance to emerging quantum technologies.